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Dr Thierry Ferrus


Telephone : +44.1223.44.29.35 (Direct)

                    +44.1223.44.29.00 (Secretary)

Email: taf25 (add domain name : "cam.ac.uk")



Spin qubits using donors


Hitachi Cambridge Laboratory

Donors or more generally impurities in silicon can be used as spin qubits and can be represented as the ultimate scaling in the Moore's law [1]. Single atoms can now be implanted using dedicated techniques [2] or be deposited by an AFM tip on a H2 passivated silicon surface after local desorption [3].

References :

  1. Gordon E. Moore, Electronics, 38 (1965) Cramming More Components Onto Integrated Circuits
  2. D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes, S. Prawer, M. Mitic, E. Gauja, S. E. Andresen, F. E. Hudson, A. S. Dzurak and R. G. Clark, Appl. Phys. Lett. 86, 202101 (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions
  3. S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rue$\beta$, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003) Atomically Precise Placement of Single Dopants in Si