Dr David Williams
Telephone : +44.1223.44.29.02 (Direct)
+44.1223.44.29.00 (Secretary)
Email: daw61 (add domain name : "cam.ac.uk")
List of publications
Journal articles :
N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, and T. Kodera, Appl. Phys. Lett. 117, 094001 (2020), Temperature dependence of hole transport properties through physically defined silicon quantum dots
K. Peng, S. Y. Wu, J. Tang, F. L. Song, C. J. Qian, S. B. Sun, S. Xiao, M. Wang, H. Ali, D. A. Williams, and X. L. Xu, Phys. Rev. Appl. 8, 6, 064018 (2017), Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field
L. Fry-Bouriaux, M. C. Rosamond, D. A. Williams, A. G. Davies, and C. Walti, Phys. Rev. B 96, 11, 115435 (2017), Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
J. D. Mar, J. J. Baumberg, X. L. Xu, A. C. Irvine, and D. A. Williams, Phys. Rev. B 95, 20, 201304 (2017), Precise measurements of the dipole moment and polarizability of the neutral exciton and positive trion in a single quantum dot
T. -Y. Yang, A. Andreev, Y. Yamaoka, T. Ferrus, T. Kodera, S. Oda, and D. A. Williams, Tech. Digest Of IEEE International Electron Devices Meeting (IEDM), p850 (2016), Quantum Information Processing in a Silicon-based System
J. Mosakowski, E. T. Owen, T. Ferrus, D. A. Williams, M. C. Dean, and C. H. W. Barnes, ArXiv, 1603.05112 (2016), An optimal single-electron charge qubit for solid-state double quantum dots
S. Das, V. Dhyani, Y.M. Georgiev, and D. A. Williams, Appl. Phys. Lett. 108, 6, 063113 (2016), High sensitivity silicon single nanowire junctionless phototransistor
J. D. Mar, J. J. Baumberg, X. L. Xu, A. C. Irvine, and D. A. Williams, Phys. Rev. B 93, 045316 (2016), Electrical control of quantum-dot fine-structure splitting for high-fidelity hole spin initialization
S. Cao, J. Tang, Y. Sun, K. Peng, Y. Gao, Y. Zhao, C. Qian, S. Sun, H. Ali, Y. Shao, S. Wu, F. Song, D.A. Williams, W. Sheng, K. Jin, and X. Xu, Nano Research 9, 2, 306 (2016), Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects
T. Ferrus, T. -Y. Yang, Y. Yamaoka, T. Kambara, T. Kodera, S. Oda, and D. A. Williams, Thinkmind Digital Library ICQNM 9, 51 (2015), Charge Qubits in Doped Quantum Dots : Effects on Computation and Coherence
S. Ihara, A. Andreev, D. A. Williams, T. Kodera, and S. Oda, Appl. Phys. Lett. 107, 1, 013102 (2015), Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures
S. Cao, J. Tang, Y. N. Gao, Y. Sun, K. S. Qiu, Y. H. Zhao, M. He, J. A. Shi, L. Gu, D. A. Williams, W. D. Sheng, K. J. Jin, and X. L. Xu, Sci. Rep. 5, 8041 (2015), Longitudinal wave function control in single quantum dots with an applied magnetic field
J. Mar, J. Baumberg, X. Xu, A. Irvine, and D. Williams, Phys. Rev. B 90, 241303 (R) (2014), Ultrafast high-fidelity initialization of a quantum-dot spin qubit without magnetic fields
S. R. Marmion, M. Ali, M. Mclaren, D. A. Williams, and B. J. Hickey, Phys. Rev. B 89, 22, 220404 (2014), Temperature dependence of spin Hall magnetoresistance in thin YIG/Pt films
J. Tang, S. Cao, Y. Gao, Y. Sun, W. Geng, D. Williams, K. Jin, and X. Xu, Appl. Phys. Lett. 105, 4, 041109 (2014), Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields
T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, and D. A. Williams, New J. Phys. 16, 1, 013016 (2014), GHz photon-activated hopping between localized states in a silicon quantum dot
M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella, D. A. Williams, and T. Ferrus, Cur. Appl. Phys. 14, 1, S115 (2014), Evidence of magnetic field quenching in doped silicon quantum dots
F. Alkhalil, J. Perez-Barraza, M. Husain, Y. Lin, N. Lambert, H. Chong, Y. Tsuchiya, D. Williams, A. Ferguson, S. Saito, and H. Mizuta, Microelectr. Eng. 111, 64 (2013), Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET
F. S. F. Brossard, B. P. L. Reid, C. C. S. Chan, X. L. Xu, J. P. Griffiths, D. A. Williams, R. Murray, and R. A. Taylor, Optics Express 21, 14, 16934 (2013), Confocal microphotoluminescence mapping of coupled and detuned states in photonic molecules
J. D. Mar, J. J. Baumberg, X. L. Xu, A. C. Irvine, C. R. Stanley, and D. A. Williams, Phys. Rev. B 87, 15, 155315 (2013), High-resolution photocurrent spectroscopy of the positive trion state in a single quantum dot
K. Y. Wang, A. M. Blackburn, H. F. Wang, J. Wunderlich, and D. A. Williams, Appl. Phys. Lett. 102, 9, 093508 (2013), Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices
F. M. Alkhalil, J. I. Perez-Barraza, M. K. Husain, Y. P. Lin, N. Lambert, H. M. H. Chong, Y. Tsuchiya, D. A. Williams, A. J. Ferguson, and H. Mizuta, Proceedings Of The Ieee Conference On Nanotechnology, 6321993 (2012), Realization of fully tunable FinFET double quantum dots with close proximity plunger gates
Y. P. Lin, J. I. Perez-Barraza, M. K. Husain, F. M. Alkhalil, N. Lambert, D. A. Williams, A. J. Ferguson, H. M. H. Chong, and H. Mizuta, Proceedings Of The Ieee Conference On Nanotechnology, 6322063 (2012), VLSI compatible parallel fabrication of scalable few electron silicon quantum dots
T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, and S. Oda, AIP Advances 2, 2, 022114 (2012), Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
A. Rossi, T. Ferrus, and D. A. Williams, Appl. Phys. Lett. 100, 13, 133503 (2012), Electron temperature in electrically isolated Si double quantum dots
T. Ferrus, A. Rossi, M. Tanner, G. Podd, P. Chapman, and D. A. Williams, New J. Phys. 13, 10, 103012 (2011), Detection of charge motion in a non-metallic silicon isolated double quantum dot
F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hugues, M. Hopkinson, X. Wang, and R. A. Taylor, Aip Conference Proceedings 1399, 11, 1017 (2011), Strongly coupled single quantum dot in a photonic crystal waveguide cavity
J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, and D. A. Williams, J. Appl. Phys. 110, 5, 053110 (2011), Voltage-controlled electron tunneling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based
T. Ferrus, A. Rossi, A. Andreev, P. Chapman, and D. A. Williams, Thinkmind Digital Library ICQNM 5, 41 (2011), Quantum Computing with Charge States in Silicon : Towards a Leadless Approach
D. A. Williams, New Electronics 44, 14, 26 (2011), Cracking the qubit conundrum
J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, and D. A. Williams, Appl. Phys. Lett. 99, 3, 031102 (2011), Electrically tunable hole tunnelling from a single self-assembled quantum dot embedded in an n-i-Schottky photovoltaic cell
A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, and S. Oda, Appl. Phys. Lett. 98, 13, 133506 (2011), Detection of variable tunneling rates in silicon quantum dots
J. D. Mar, X. L. Xu, J. J. Baumberg, F. S. F. Brossard, A. C. Irvine, C. Stanley, and D. A. Williams, Phys. Rev. B 83, 7, 075306 (2011), Bias-controlled single-electron charging of a self-assembled quantum dot in a two-dimensional-electron-gas-based n-i-Schottky diode
K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, and B. L. Gallagher, Appl. Phys. Lett. 97, 26, 262102 (2010), Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
J. D. Mar, X. L. Xu, J. S. Sandhu, A. C. Irvine, M. Hopkinson, and D. A. Williams, Appl. Phys. Lett. 97, 22, 221108 (2010), Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation
A. Rossi, T. Ferrus, G. J. Podd, and D. A. Williams, Appl. Phys. Lett. 97, 22, 223506 (2010), Charge detection in phosphorus-doped silicon double quantum dots
X. Xu, A. C. Irvine, Y. Yang, X. Zhang, and D. A. Williams, Phys. Rev. B 82, 19, (2010), Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field
K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, and B. L. Gallagher, J. Magn. Magn. Mater. 322, 21, 3481 (2010), Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning
F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hugues, M. Hopkinson, X. Wang, and R. A. Taylor, Appl. Phys. Lett. 97, 11, 111101 (2010), Strongly coupled single quantum dot in a photonic crystal waveguide cavity
X. Xu, F. S. F. Brossard, D. A. Williams, D. P. Collins, M. J. Holmes, R. A. Taylor, and X. Zhang, New J. Phys. 12, 8, (2010), Cavity modes of tapered ZnO nanowires
J. Ogi, T. Ferrus, T. Kodera, Y. Tsuchiya, K. Uchida, D. Williams, S. Oda, and H. Mizuta, Jpn. J. Appl. Phys. 49, 4, 045203 (2010), Experimental Observation of Enhanced Electron-Phonon Interaction in Suspended Si Double Quantum Dots
G. J. Podd, S. J. Angus, D. A. Williams, and A. J. Ferguson, Appl. Phys. Lett. 96, 8, 082104 (2010), Charge sensing in intrinsic silicon quantum dots
X. Yang, X. Xu, X. Wang, H. Ni, Q. Han, Z. Niu, and D. A. Williams, Appl. Phys. Lett. 96, 8, (2010), Optically controlled quantum dot gated transistors with high on/off ratio
M. G. Tanner, P. Chapman, G. Podd, and D. A. Williams, J. Appl. Phys. 106, 4, 043713 (2009), Indirect observation of periodic charge polarization in silicon isolated double quantum dots
T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, and G. A. D. Briggs, J. Appl. Phys. 106, 3, 033705 (2009), Cryogenic instrumentation for fast current measurement in a silicon single electron transistor
X. Xu, F. S. F. Brossard, D. A. Williams, D. P. Collins, M. J. Holmes, R. A. Taylor, and X. Zhang, Appl. Phys. Lett. 94, 23, (2009), Mapping cavity modes of ZnO nanobelts
K. Hammura, and D. Williams, J. Opt. A: Pure Appl. Opt. 11, 5, 054003 (2009), Derivation of the sensitivity of a Geiger mode avalanche photodiode detector from a given efficiency for quantum key distribution
K. Y. Wang, A. C. Irvine, R. P. Campion, C. T. Foxon, J. Wunderlich, D. A. Williams, and B. L. Gallagher, J. Magn. Magn. Mater. 321, 8, 971 (2009), Magneto-optical and micromagnetic simulation study of the current-driven domain wall motion in ferromagnetic (Ga,Mn) As
X. Xu, F. Brossard, K. Hammura, D. Williams, B. Alloing, L. H. Li, and A. Fiore, Microelectron. J. 40, 4-5, 722 (2009), Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths
K. H. Lee, F. S. F. Brossard, M. Hadjipanayi, X. Xu, F. Waldermann, A. M. Green, D. N. Sharp, A. J. Turberfield, D. A. Williams, and R. A. Taylor, Nanotechnology 19, 45, 455307 (2008), Towards registered single quantum dot photonic devices
D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, and G. A. D. Briggs, Appl. Phys. Lett. 93, 19, 192116 (2008), Single shot measurement of a silicon single electron transistor
K. Y. Wang, A. C. Irvine, J. Wunderlich, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, D. A. Williams, and B. L. Gallagher, New J. Phys. 10, 085007 (2008), Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
A. D. Giddings, O. N. Makarovsky, M. N. Khalid, S. Yasin, K. W. Edmonds, R. P. Campion, J. Wunderlich, T. Jungwirth, D. A. Williams, B. L. Gallagher, and C. T. Foxon, New J. Phys. 10, 085004 (2008), Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
X. Xu, F. Brossard, K. Hammura, D. Williams, B. Alloing, L. H. Li, and A. Fiore, Appl. Phys. Lett. 93, 2, 021124 (2008), "Plug and Play" single photons at 1.3 mu m approaching gigahertz operation
H. I. Jorgensen, K. Grove-Rasmussen, K. -Y. Wang, A. M. Blackburn, K. Flensberg, P. E. Lindelof, and D. A. Williams, Nat. Phys. 4, 7, 536 (2008), Singlet-triplet physics and shell filling in carbon nanotube double quantum dots
B. G. Park, J. Wunderlich, D. A. Williams, S. J. Joo, K. Y. Jung, K. H. Shin, K. Olejnik, A. B. Shick, and T. Jungwirth, Phys. Rev. Lett. 100, 8, 087204 (2008), Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlO(x)/Pt structures
P. Howard, A. Andreev, and D. A. Williams, Phys. Stat. Sol. C 5, 9, 3156 (2008), Density functional theory calculations of electronic structure in silicon double quantum dots
X. Xu, I. Toft, R. Phillips, J. Mar, K. Hammura, and D. Williams, Appl. Phys. Lett. 90, 6, 061103 (2007), "Plug and play" single-photon sources
X. Xu, I. Toft, J. Mar, K. Hammura, R. T. Phillips, and D. A. Williams, J. Phys.: Conference Series 61, 1, 1271 (2007), Single-photon sources with optical fibre integration
J. Wunderlich, T. Jungwirth, V. Novak, A. C. Irvine, B. Kaestner, A. B. Shick, C. T. Foxon, R. P. Campion, D. A. Williams, and B. L. Gallagher, Sol. Stat. Comm. 144, 12, 536 (2007), Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor
J. Wunderlich, A. C. Irvine, J. Zemen, V. Holy, A. W. Rushforth, E. De Ranieri, U. Rana, K. Vyborny, J. Sinova, C. T. Foxon, R. P. Campion, D. A. Williams, B. L. Gallagher, and T. Jungwirth, Phys. Rev. B 76, 5, 054424 (2007), Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: Demonstration in current-induced switching
G. Podd, G. Hutchinson, D. Hasko, and D. Williams, IEEE Trans. Appl. Supercond. 17, 2, 710 (2007), Hot-phonon controlled MicroSQUIDs with independently controlled junctions
K. Y. Wang, A. W. Rushforth, V. A. Grant, R. P. Campion, K. W. Edmonds, C. R. Staddon, C. T. Foxon, B. L. Gallagher, J. Wunderlich, and D. A. Williams, J. Appl. Phys. 101, 10, 106101 (2007), Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain
L. A. Creswell, D. G. Hasko, and D. A. Williams, Microelectr. Eng. 84, 5-8, 1614 (2007), Microwave resonances in silicon-based single electron transistors
L. San Emeterio Alvarez, G. Burnell, C. H. Marrows, K. -Y. Wang, A. M. Blackburn, and D. A. Williams, J. Appl. Phys. 101, 9, 09F508 (2007), Nucleation and propagation of domains walls in a Co/Pt multilayer wire
G. J. Podd, G. D. Hutchinson, D. A. Williams, and D. G. Hasko, Phys. Rev. B 75, 13 , 134501 (2007), Micro-SQUIDs with controllable asymmetry via hot-phonon controlled junctions
J. Wunderlich, T. Jungwirth, A. C. Irvine, B. Kaestner, A. B. Shick, R. P. Campion, D. A. Williams, and B. L. Gallagher, J. Magn. Magn. Mater. 310, 2, 1883 (2007), Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor
A. S. Troup, J. Wunderlich, and D. A. Williams, J. Appl. Phys. 101, 3, 033701 (2007), Weak localization and correlation effects in thin-film degenerate n-type silicon
D. S. Gandolfo, D. A. Williams, and H. Qin, J. Appl. Phys. 101, 1, 013701 (2007), Electron transport through a silicon-germanium double quantum dot at 40 mK
G. D. Hutchinson, C. A. Holmes, T. M. Stace, T. P. Spiller, G. J. Milburn, S. D. Barrett, D. G. Hasko, and D. A. Williams, Phys. Rev. A 74, 6, 062302 (2006), Model for an irreversible bias current in the superconducting qubit measurement process
X. Xu, and D. A. Williams, Semicond. Sci. Technol. 21, 12, 1533 (2006), Optically induced hysteresis of bilateral p-i-n junctions incorporated with InAs quantum dots
J. Gorman, E. G. Emiroglu, D. G. Hasko, and D. A. Williams, Phys. Rev. Lett. 97, 20, 208902 (2006), Gorman et al. Reply
X. Xu, A. Andreev, D. A. Williams, and J. R. A. Cleaver, Appl. Phys. Lett. 89, 9, (2006), Electroluminescence from coupled InGaAs/GaAs quantum dots embedded in lateral p-i-n junctions
J. Wunderlich, T. Jungwirth, B. Kaestner, A. C. Irvine, A. B. Shick, N. Stone, K. -Y. Wang, U. Rana, A. D. Giddings, C. T. Foxon, R. P. Campion, D. A. Williams, and B. L. Gallagher, Phys. Rev. Lett. 97, 7, 077201 (2006), Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor
A. S. Troup, D. G. Hasko, J. Wunderlich, and D. A. Williams, Appl. Phys. Lett. 89, 2, 022116 (2006), Magnetoresistance in silicon-based semiconductor-metal hybrid structures
H. Qin, and D. A. Williams, Appl. Phys. Lett. 88, 20, (2006), Radio-frequency point-contact electrometer
K. H. Lee, A. M. Green, R. A. Taylor, D. N. Sharp, J. Scrimgeour, O. M. Roche, J. H. Na, A. F. Jarjour, A. J. Turberfield, F. S. F. Brossard, D. A. Williams, and G. A. D. Briggs, Appl. Phys. Lett. 88, 19, 193106 (2006), Registration of single quantum dots using cryogenic laser photolithography
K. H. Lee, A. M. Green, R. A. Taylor, D. N. Sharp, A. J. Turberfield, F. S. F. Brossard, D. A. Williams, and G. A. D. Briggs, Appl. Phys. Lett. 88, 14, 143123 (2006), Cryogenic two-photon laser photolithography with SU-8
M. G. Tanner, D. G. Hasko, and D. A. Williams, Microelectr. Eng. 83, 4-9, 1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation
A. M. Blackburn, D. G. Hasko, and D. A. Williams, Microelectr. Eng. 83, 4-9, 1241 (2006), Electron-beam induced deposition of a nanotip within a nano-aperture structure
S. Rahman, J. Gorman, C. H. W. Barnes, D. A. Williams, and H. P. Langtangen, Phys. Rev. B 73, 23, (2006), Finite-element analysis of a silicon-based double quantum dot structure
K. H. Lee, A. M. Green, R. A. Taylor, D. N. Sharp, J. Scrimgeour, O. M. Roche, J. H. Na, A. F. Jarjour, A. J. Turberfield, F. S. F. Brossard, D. A. Williams, and G. A. D. Briggs, Appl. Phys. Lett. 88, 19, 193106 (2006), Registration of single quantum dots using cryogenic laser photolithography
M. G. Tanner, D. G. Hasko, and D. A. Williams, Microelectr. Eng. 83, 4-9, 1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation
J. Gorman, D. G. Hasko, and D. A. Williams, Phys. Rev. Lett. 95, 9, 090502 (2005), Charge-qubit operation of an isolated double quantum dot
D. S. Gandolfo, D. A. Williams, and H. Qin, J. Appl. Phys. 97, 6, 063710 (2005), Characterization of a silicon-germanium quantum dot structure at 4.2 K and 40 mK
A. D. Giddings, M. N. Khalid, T. Jungwirth, J. Wunderlich, S. Yasin, R. P. Campion, K. W. Edmonds, J. Sinova, K. Ito, K. Y. Wang, D. Williams, B. L. Gallagher, and C. T. Foxon, Phys. Rev. Lett. 94, 12, 127202 (2005), Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
X. Xu, D. A. Williams, and J. R. A. Cleaver, Appl. Phys. Lett. 86, 1, (2005), Splitting of excitons and biexcitons in coupled InAs quantum dot molecules
X. Xu, D. A. Williams, and J. R. A. Cleaver, Appl. Phys. Lett. 85, 15, (2004), Electrically pumped single-photon sources in lateral p-i-n junctions
A. M. Blackburn, D. G. Hasko, H. Ahmed, and D. A. Williams, J. Vac. Sci. Technol. B 22, 3, 1298 (2004), Tungsten pedestal structure for nanotriode devices
G. D. Hutchinson, H. Qin, D. G. Hasko, D. J. Kang, and D. A. Williams, Appl. Phys. Lett. 84, 1, 136 (2004), Controlled-junction superconducting quantum interference device via phonon injection
G. D. Hutchinson, H. Qin, D. J. Kang, S. B. Lee, D. G. Hasko, M. G. Blamire, and D. A. Williams, Superconductor Science & Technology 16, 12, 1544 (2003), Hot phonon controlled-junction superconducting quantum interference device
E. G. Emiroglu, D. G. Hasko, and D. A. Williams, Appl. Phys. Lett. 83, 19, 3942 (2003), Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon
H. Qin, S. Yasin, and D. A. Williams, J. Vac. Sci. Technol. B 21, 6, 2852 (2003), Fabrication and characterization of a SiGe double quantum dot structure
A. Ardavan, M. Austwick, S. C. Benjamin, G. A. D. Briggs, T. J. S. Dennis, A. Ferguson, D. G. Hasko, M. Kanai, A. N. Khlobystov, B. W. Lovett, G. W. Morley, R. A. Oliver, D. G. Pettifor, K. Porfyrakis, J. H. Reina, J. H. Rice, J. D. Smith, R. A. Taylor, D. A. Williams, C. Adelmann, H. Mariette, and R. J. Hamers, Philosophical Transactions Of The Royal Society Of London Series A-mathematical Physical And Engineering Sciences 361, 1808, 1473 (2003), Nanoscale solid-state quantum computing
A. J. Ferguson, D. G. Hasko, H. Ahmed, and D. A. Williams, Appl. Phys. Lett. 82, 25, 4492 (2003), Variable coupling in n-type silicon-germanium double quantum dots
L. Seung-Beck, G. D. Hutchinson, D. G. Hasko, D. A. Williams, and H. Ahmed, IEEE Trans. Appl. Supercond. 13, 2, (2003), Digital logic gates using hot-phonon controlled superconducting nanotransistors
B. Kaestner, J. Wunderlich, D. G. Hasko, and D. A. Williams, Microelectron. J. 34, 5-8, 423 (2003), Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs
L. A. W. Robinson, S. B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, Nanotechnology 14, 2, PII S0957-4484(03)54422-1 (2003), Fabrication of self-aligned side gates to carbon nanotubes
L. Seung-Beck, G. D. Hutchinson, D. A. Williams, D. G. Hasko, and H. Ahmed, Nanotechnology 14, 2, (2003), Superconducting nanotransistor based digital logic gates
E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, J. Vac. Sci. Technol. B 20, 6, 2806 (2002), Single-electron parametron memory cell
E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, J. Vac. Sci. Technol. B 20, 6, 2806 (2002), Single-electron parametron memory cell
P. A. Cain, H. Ahmed, and D. A. Williams, J. Appl. Phys. 92, 1, 346 (2002), Hole transport in coupled SiGe quantum dots for quantum computation
B. Kaestner, D. G. Hasko, and D. A. Williams, Jpn. J. Appl. Phys. 41, 4B, 2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs
A. J. Ferguson, P. A. Cain, D. A. Williams, and G. A. D. Briggs, Phys. Rev. A 65, 3, (2002), Ammonia-based quantum computer
B. Kaestner, D. G. Hasko, and D. A. Williams, Jpn. J. Appl. Phys. 41, 4B, 2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs
P. A. Cain, H. Ahmed, and D. A. Williams, Appl. Phys. Lett. 78, 23, 3624 (2001), Conductance peak splitting in hole transport through a SiGe double quantum dot
H. O. Muller, D. A. Williams, and H. Mizuta, VLSI Design 13, 1-4, 193 (2001), Design optimization of Coulomb blockade devices
P. A. Cain, H. Ahmed, D. A. Williams, and J. M. Bonar, Appl. Phys. Lett. 77, 21, 3415 (2000), Hole transport through single and double SiGe quantum dots
H. O. Muller, D. A. Williams, and H. Mizuta, Japanese Journal Of Applied Physics Part 2-letters 39, 7B, L723 (2000), Coulomb blockade and disorder in 2D quantum dot arrays
H. O. Muller, D. A. Williams, H. Mizuta, and Z. A. K. Durrani, Mater. Sci. Eng. B 74, 1-3, 36 (2000), Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance
H. O. Muller, D. A. Williams, H. Mizuta, Z. A. K. Durrani, A. C. Irvine, and H. Ahmed, Physica B 272, 1-4, 85 (1999), Simulation of Si multiple tunnel junctions
D. A. Williams, Superlat. Microstr. 25, 5-6, 701 (1999), NS junctions using high-mobility GaAs : AlGaAs heterostructures
T. D. Moore, and D. A. Williams, Phys. Rev. B 59, 11, 7308 (1999), Andreev reflection at high magnetic fields
J. J. Baumberg, D. A. Williams, and K. Kohler, Phys. Rev. Lett. 78, 17, 3358 (1997), Ultrafast acoustic phonon ballistics in semiconductor heterostructures
A. M. Hart, D. A. Williams, and H. Ahmed, J. Phys. : Condens. Mat. 9, 12, L197 (1997), Magnetoresistance fluctuations in mesoscopic aluminium structures
E. K. Pettersen, D. A. Williams, and H. Ahmed, Semicond. Sci. Technol. 11, 8, 1151 (1996), Single-particle and transport relaxation times in back-gated undoped AlGaAs/GaAs
A. M. Marsh, and D. A. Williams, Journal Of Vacuum Science & Technology A-vacuum Surfaces And Films 14, 4, 2577 (1996), Granular superconductor contacts to two-dimensional electron gases
J. J. Baumberg, and D. A. Williams, Phys. Rev. B 53, 24, (1996), Coherent phonon-plasmon modes in GaAs:Al xGa 1-xAs heterostructures
A. M. Marsh, D. A. Williams, and H. Ahmed, Semicond. Sci. Technol. 10, 12, 1694 (1995), Granular superconducting contacts to gaas-algaas semiconductor heterostructures
A. M. Marsh, D. A. Williams, and H. Ahmed, Physica B 203, 3-4, 307 (1994), Multiple andreev reflection in buried heterostructure - alloy superconductor devices
A. M. Marsh, D. A. Williams, and H. Ahmed, Phys. Rev. B 50, 11, 8118 (1994), Supercurrent transport through a high-mobility 2-dimensional electron-gas
B. W. Alphenaar, and D. A. Williams, Phys. Rev. B 50, 8, 5795 (1994), Magnetic-field dependence of the quantum-hall-liquid insulator transition
F. Mahmood, O. S. Cheema, D. A. Williams, R. A. Mcmahon, H. Ahmed, and M. Suleman, J. Vac. Sci. Technol. B 8, 4, 630 (1990), Rapid electron-beam annealing of tantalum films on silicon
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Mater. Sci. Eng. B 4, 1-4, 423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers
D. A. Williams, R. A. Mcmahon, H. Ahmed, G. Garry, L. Karapiperis, and D. Dieumegard, J. Appl. Phys. 65, 9, 3718 (1989), Selective epitaxial-growth in silicon on insulator - planarity and mass-flow
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Appl. Surf. Sci. 36, 1-4, 614 (1989), Seed window defects in silicon on insulator material
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Mater. Sci. Eng. B 4, 1-4, 423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Phys. Rev. B 39, 14, 10467 (1989), Dynamic morphology of the nonequilibrium solid-melt interface in silicon
B. Dunne, S. O'flanagan, L. Hobbs, C. G. Cahill, A. Mathewson, W. A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J. L. Regolini, D. Bensahel, J. L. Mermet, H. Bono, H. Achard, J. P. Joly, K. M. Barfoot, M. Field, G. F. Hopper, D. J. Godfrey, P. J. Timans, D. Smith, D. A. Williams, R. A. Mcmahon, and H. Ahmed, Microelectr. Eng. 8, 3-4, (1988), Materials and devices toward three-dimensional integration
D. J. Stickland, and D. Williams, Observatory 103, 1053, 58 (1983), Psi-3 piscium and the rotation activity connection
Conference proceedings :
T. Ferrus, A. Rossi, T. Kodera, T. Kambara, S. Oda, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Manipulation of silicon quantum dots and isolated structures using GHz photons
J. Mosakowski, T. Ferrus, D. A. Williams, E. Owen, M. Dean, and C. H. W. Barnes, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Controlling single qubit gate fidelity in double quantum dots
T. Y. Yang, S. Das, T. Ferrus, A. Andreev, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Charge Sensing of Two Isolated Double Quantum Dots
F. M. Alkhalil, J. I. Perez-Barraza, M. K. Husain, Y. P. Lin, N. Lambert, H. M. H. Chong, Y. Tsuchiya, D. A. Williams, A. J. Ferguson, and H. Mizuta, 12th IEEE International Conference on Nanotechnology, NANO 2012, p6321993 (2012), Realization of fully tunable FinFET double quantum dots with close proximity plunger gates
Y. P. Lin, J. I. Perez-Barraza, M. K. Husain, F. M. Alkhalil, N. Lambert, D. A. Williams, A. J. Ferguson, H. M. H. Chong, and H. Mizuta, 12th IEEE International Conference on Nanotechnology, NANO 2012, p6322063 (2012), VLSI compatible parallel fabrication of scalable few electron silicon quantum dots
T. Ferrus, A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, and D. Williams, 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, p6243289 (2012), Microwave manipulation of electrons in silicon quantum dots
F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hugues, M. Hopkinson, X. Wang, and R. A. Taylor, 30th International Conference on the Physics of Semiconductors, p1017 (2011), Strongly coupled single quantum dot in a photonic crystal waveguide cavity
J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, and D. A. Williams, 9th Workshop on Piezoresponse Force Microscopy (PFM)/10th International Symposium on Ferroic Domains, p053110 (2011), Voltage-controlled electron tunneling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based
T. Kodera, G. Yamahata, T. Kambara, K. Horibe, T. Ferrus, D. Williams, Y. Arakawa, and S. Oda, Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, p331 (2011), Realization of lithographically-defined silicon quantum dots without unintentional localized potentials
K. Hammura, and D. Williams, Photon 2008 Conference, p054003 (2009), Derivation of the sensitivity of a Geiger mode avalanche photodiode detector from a given efficiency for quantum key distribution
X. Xu, F. Brossard, K. Hammura, D. Williams, B. Alloing, L. H. Li, and A. Fiore, International Conference on Superlattices, Nanostructures and Nanodevices, p722 (2009), Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths
M. G. Tanner, G. Podd, P. Chapman, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p239 (2009), Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use
T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, and G. A. D. Briggs, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p317 (2009), Single shot measurement of a silicon single electron transistor
X. Xu, A. Andreev, F. Brossard, K. Hammura, and D. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p246 (2009), InAs based quantum dots for Quantum Information Processing: From Fundamental Physics to ' Plug and Play' Devices
P. Howard, A. D. Andreev, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p243 (2009), Modelling of charge qubits based on si/sio(2) double quantum dots
D. A. Williams, M. G. Tanner, T. Ferrus, G. Podd, A. Andreev, and P. Chapman, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p235 (2009), Silicon isolated double quantum-dot qubit architectures
T. Ferrus, D. A. Williams, D. G. Hasko, L. Creswell, R. J. Collier, A. Lam, Q. R. Morrissey, S. R. Burge, M. J. French, and G. A. D. Briggs, IEEE Silicon Nanoelectronics Workshop (SNW 2008), p32 (2008), Single shot measurement in silicon single electron transistors
K. Hammura, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology ISOM-TOHYO'08, p (2008), Derivation of sensitivity of a Geiger mode APDS detector from a given efficiency to estimate total photon counts
M. G. Tanner, G. Podd, and D. A. Williams, 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), p (2008), Controlled polarisation and excitation of silicon on insulator isolated double quantum dots with remote charge sensing
M. G. Tanner, G. Podd, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW 2008), p125 (2008), Controlled polarisation and excitation of silicon on insulator isolated double quantum dots with remote charge sensing
P. Howard, A. Andreev, and D. A. Williams, 34th International Symposium on Compound Semiconductors, p3156 (2008), Density functional theory calculations of electronic structure in silicon double quantum dots
G. Podd, G. Hutchinson, D. Hasko, and D. Williams, Applied Superconductivity Conference 2006, p710 (2007), Hot-phonon controlled MicroSQUIDs with independently controlled junctions
L. A. Creswell, D. G. Hasko, and D. A. Williams, 32nd International Conference on Micro- and Nano-Engineering, p1614 (2007), Microwave resonances in silicon-based single electron transistors
L. San Emeterio Alvarez, G. Burnell, C. H. Marrows, K. -Y. Wang, A. M. Blackburn, and D. A. Williams, 10th Joint Magnetism and Magnetic Materials Conference/International Magnetics Conference, p09F508 (2007), Nucleation and propagation of domains walls in a Co/Pt multilayer wire
B. W. Balmforth, F. S. F. Brossard, S. Schirmer, and D. A. Williams, 4th IEEE International Conference on Group IV Photonics, p152 (2007), Silicon photonic crystal microcavities for optical quantum information processing
M. G. Tanner, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation
A. M. Blackburn, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1241 (2006), Electron-beam induced deposition of a nanotip within a nano-aperture structure
K. H. Lee, A. M. Green, F. S. F. Brossard, R. A. Taylor, D. N. Sharp, A. J. Turberfield, D. A. Williams, and G. A. D. Briggs, 2006 Conference on Lasers & Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS), p (2006), Study of two-photon laser photolithography with SU-8 at cryogenic temperatures
M. G. Tanner, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation
M. G. Tanner, E. G. Emiroglu, D. G. Hasko, and D. A. Williams, 30th International Conference on Micro and Nano Engineering, p195 (2005), Geometry dependence of the energy levels in silicon isolated double quantum-dots
A. M. Blackburn, D. G. Hasko, and D. A. Williams, 18th International Vacuum Nanoelectronics Conference (IVCN 2005) , p180 (2005), In-vacuum resonant tunneling in the nanopentode
E. G. Emiroglu, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p701 (2004), Single-electron polarization of an isolated double quantum dot in silicon
A. M. Blackburn, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p797 (2004), Improved nanotriode fabrication process for multiple gates and reduced leakage current
G. D. Hutchinson, H. Qin, D. J. Kang, S. B. Lee, M. G. Blamire, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p773 (2004), Fabrication of hot phonon controlled junction microSQUIDs
A. M. Blackburn, D. G. Hasko, H. Ahmed, and D. A. Williams, 16th International Vacuum Microelectronics Conference (IVMC2003), p1298 (2004), Tungsten pedestal structure for nanotriode devices
X. Xu, D. A. Williams, J. R. A. Cleaver, D. Zhou, and C. Stanley, 2004 13th International Conference on Semiconducting and Insulating Materials, p (2004), InAs quantum dots for quantum information processing
G. D. Hutchinson, H. Qin, D. J. Kang, S. B. Lee, D. G. Hasko, M. G. Blamire, and D. A. Williams, International Superconducting Electronics Conference (ISEC 2003), p1544 (2003), Hot phonon controlled-junction superconducting quantum interference device
H. Qin, S. Yasin, and D. A. Williams, 47th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), p2852 (2003), Fabrication and characterization of a SiGe double quantum dot structure
A. Ardavan, M. Austwick, S. C. Benjamin, G. A. D. Briggs, T. J. S. Dennis, A. Ferguson, D. G. Hasko, M. Kanai, A. N. Khlobystov, B. W. Lovett, G. W. Morley, R. A. Oliver, D. G. Pettifor, K. Porfyrakis, J. H. Reina, J. H. Rice, J. D. Smith, R. A. Taylor, D. A. Williams, C. Adelmann, H. Mariette, and R. J. Hamers, Discussion Meeting of the Royal-Society , p1473 (2003), Nanoscale solid-state quantum computing
L. Seung-Beck, G. D. Hutchinson, D. G. Hasko, D. A. Williams, and H. Ahmed, Applied Superconductivity Conference 2002, p (2003), Digital logic gates using hot-phonon controlled superconducting nanotransistors
E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 28th International Conference on Micro- and Nano-Engineering, p755 (2003), Silicon single-electron parametron cell for solid-state quantum information processing
L. A. W. Robinson, S. B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, 28th International Conference on Micro- and Nano-Engineering, p615 (2003), Self-aligned electrodes for suspended carbon nanotube structures
B. Kaestner, D. A. Williams, and D. G. Hasko, 28th International Conference on Micro- and Nano-Engineering, p797 (2003), Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs
B. Kaestner, J. Wunderlich, D. G. Hasko, and D. A. Williams, Conference on Low Dimensional Structures and Devices (LDSD), p423 (2003), Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs
L. A. W. Robinson, S. B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, 3rd International Conference on Trends in Nanotechnology, pPII S0957-4484(03)54422-1 (2003), Fabrication of self-aligned side gates to carbon nanotubes
L. Seung-Beck, G. D. Hutchinson, D. A. Williams, D. G. Hasko, and H. Ahmed, Trends in Nanotechnology (TNT 2002) Conference, p (2003), Superconducting nanotransistor based digital logic gates
A. M. Blackburn, D. G. Hasko, D. A. Williams, and H. Ahmed, 16th International Vacuum Microelectronics Conference (IVMC2003), p111 (2003), Incoporation of a tungsten pedestal structure into the nanotriode device
E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 46th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), p2806 (2002), Single-electron parametron memory cell
E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 46th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), p2806 (2002), Single-electron parametron memory cell
B. Kaestner, D. G. Hasko, and D. A. Williams, International Conference on Solid State Devices and Materials, p2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs
B. Kaestner, D. G. Hasko, and D. A. Williams, International Conference on Solid State Devices and Materials, p2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs
H. O. Muller, D. A. Williams, and H. Mizuta, 7th International Workshop on Computational Electronics (IWCE-7), p193 (2001), Design optimization of Coulomb blockade devices
H. O. Muller, D. A. Williams, H. Mizuta, and Z. A. K. Durrani, 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), p36 (2000), Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance
H. -O. Muller, D. A. Williams, and H. Mizuta, 7th International Workshop on Computational Electronics. Book of Abstract. IWCE, p (2000), Design optimization of Coulomb blockade devices
H. O. Muller, D. A. Williams, H. Mizuta, Z. A. K. Durrani, A. C. Irvine, and H. Ahmed, 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11), p85 (1999), Simulation of Si multiple tunnel junctions
D. A. Williams, A. M. Marsh, and H. Ahmed, 11th International Conference on the Electronic Properties of Two-Dimensional Systems, p (1996), Transport through superconductor-semiconductor junctions in different scattering limits
J. J. Baumberg, and D. A. Williams, Combined Conference of the 4th International Conference on Phonon Physics and the 8th International Conference on Phonon Scattering in, p (1996), Ultrafast dynamics of optic phonons in a 2D electron gas
B. W. Alphenaar, and D. A. Williams, Proceedings of 22nd International Conference on the Physics of Semiconductors, p (1995), Magnetic field dependence of the quantum Hall liquid/insulator transition
D. A. Williams, A. M. Marsh, T. D. Moore, and W. M. Stobbs, Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995, p561 (1995), Granular superconducting contacts to buried two-dimensional electron gases
A. M. Marsh, D. A. Williams, and H. Ahmed, NATO Advanced Research Workshop on Mesoscopic Superconductivity, p307 (1994), Multiple andreev reflection in buried heterostructure - alloy superconductor devices
D. A. Williams, E. K. Pettersen, D. J. Paul, and H. Ahmed, Proceedings of Microscopy of Semiconducting Materials: 8th Oxford Conference (SMM VIII), p (1993), High resolution scanning electron microscopy in mesoscopic physics
D. A. Williams, H. H. Mueller, W. Chen, J. D. White, J. Allam, K. Nakazato, and J. R. A. Cleaver, Proceedings of the 4th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, p (1993), Multistability at the tunnelling-ballistic boundary in a mesoscopic device
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Symp At The 1989 Spring Meeting Of The European Materials Soc : Science And Technology Of Defects In Silicon, p423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers
E. C. G. Kirk, D. A. Williams, and H. Ahmed, Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference, p (1989), Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Symp At The 1989 Spring Meeting Of The European Materials Soc : Science And Technology Of Defects In Silicon, p423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers
B. Dunne, S. O'flanagan, L. Hobbs, C. G. Cahill, A. Mathewson, W. A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J. L. Regolini, D. Bensahel, J. L. Mermet, H. Bono, H. Achard, J. P. Joly, K. M. Barfoot, M. Field, G. F. Hopper, D. J. Godfrey, P. J. Timans, D. Smith, D. A. Williams, R. A. Mcmahon, and H. Ahmed, 1st European SOI Workshop, p (1988), Materials and devices toward three-dimensional integration
C. G. Cahill, B. Dunne, S. O'flanagan, L. Hobbs, A. Mathewson, W. A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J. L. Regolini, D. Bensahel, J. L. Mermet, H. Bono, H. Achard, J. P. Joly, K. M. Barfoot, M. Field, G. F. Hopper, D. J. Godfrey, P. J. Timans, D. Smith, D. A. Williams, R. A. Mcmahon, and H. Ahmed, ESPRIT '88. Putting the Technology to Use. Proceedings of the 5th Annual ESPRIT Conference, p (1988), Materials and devices toward three-dimensional integration
D. A. Williams, R. A. Mcmahon, and H. Ahmed, Silicon-On-Insulator and Buried Metals in Semiconductors. Symposium, p (1988), Improvements in zone melt recrystallized SOI layers by the use of selective epitaxial growth in the seed windows
D. A. Williams, R. A. Mcmahon, H. Ahmed, K. M. Barfoot, D. J. Godfrey, B. Dunne, and A. Mathewson, Silicon-On-Insulator and Buried Metals in Semiconductors. Symposium, p (1988), TEM and SEM studies of multiple silicon on insulator films for three-dimensional circuits
D. A. Williams, R. A. Mcmahon, H. Ahmed, and W. M. Stobbs, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, p (1987), Cross sectional TEM and SEM studies of silicon on insulator regrowth mechanisms
D. A. Williams, R. A. Mcmahon, D. G. Hasko, H. Ahmed, G. F. Hopper, and D. J. Godfrey, Semiconductor-on-Insulator and Thin Film Transistor Technology Symposium, p (1986), A study of melting and resolidification of silicon-on-insulator structures formed by lateral epitaxy