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Dr David Williams


Telephone : +44.1223.44.29.02 (Direct)

                  +44.1223.44.29.00 (Secretary)

Email: daw61 (add domain name : "cam.ac.uk")



List of publications


Journal articles :






Conference proceedings :


  • T. Ferrus, A. Rossi, T. Kodera, T. Kambara, S. Oda, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Manipulation of silicon quantum dots and isolated structures using GHz photons

  • J. Mosakowski, T. Ferrus, D. A. Williams, E. Owen, M. Dean, and C. H. W. Barnes, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Controlling single qubit gate fidelity in double quantum dots

  • T. Y. Yang, S. Das, T. Ferrus, A. Andreev, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Charge Sensing of Two Isolated Double Quantum Dots

  • F. M. Alkhalil, J. I. Perez-Barraza, M. K. Husain, Y. P. Lin, N. Lambert, H. M. H. Chong, Y. Tsuchiya, D. A. Williams, A. J. Ferguson, and H. Mizuta, 12th IEEE International Conference on Nanotechnology, NANO 2012, p6321993 (2012), Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

  • Y. P. Lin, J. I. Perez-Barraza, M. K. Husain, F. M. Alkhalil, N. Lambert, D. A. Williams, A. J. Ferguson, H. M. H. Chong, and H. Mizuta, 12th IEEE International Conference on Nanotechnology, NANO 2012, p6322063 (2012), VLSI compatible parallel fabrication of scalable few electron silicon quantum dots

  • T. Ferrus, A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, and D. Williams, 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, p6243289 (2012), Microwave manipulation of electrons in silicon quantum dots

  • F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hugues, M. Hopkinson, X. Wang, and R. A. Taylor, 30th International Conference on the Physics of Semiconductors, p1017 (2011), Strongly coupled single quantum dot in a photonic crystal waveguide cavity

  • J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, and D. A. Williams, 9th Workshop on Piezoresponse Force Microscopy (PFM)/10th International Symposium on Ferroic Domains, p053110 (2011), Voltage-controlled electron tunneling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based

  • T. Kodera, G. Yamahata, T. Kambara, K. Horibe, T. Ferrus, D. Williams, Y. Arakawa, and S. Oda, Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, p331 (2011), Realization of lithographically-defined silicon quantum dots without unintentional localized potentials

  • K. Hammura, and D. Williams, Photon 2008 Conference, p054003 (2009), Derivation of the sensitivity of a Geiger mode avalanche photodiode detector from a given efficiency for quantum key distribution

  • X. Xu, F. Brossard, K. Hammura, D. Williams, B. Alloing, L. H. Li, and A. Fiore, International Conference on Superlattices, Nanostructures and Nanodevices, p722 (2009), Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths

  • M. G. Tanner, G. Podd, P. Chapman, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p239 (2009), Controlled polarisation of silicon isolated double quantum dots with remote charge sensing for qubit use

  • T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, and G. A. D. Briggs, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p317 (2009), Single shot measurement of a silicon single electron transistor

  • X. Xu, A. Andreev, F. Brossard, K. Hammura, and D. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p246 (2009), InAs based quantum dots for Quantum Information Processing: From Fundamental Physics to ' Plug and Play' Devices

  • P. Howard, A. D. Andreev, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p243 (2009), Modelling of charge qubits based on si/sio(2) double quantum dots

  • D. A. Williams, M. G. Tanner, T. Ferrus, G. Podd, A. Andreev, and P. Chapman, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p235 (2009), Silicon isolated double quantum-dot qubit architectures

  • T. Ferrus, D. A. Williams, D. G. Hasko, L. Creswell, R. J. Collier, A. Lam, Q. R. Morrissey, S. R. Burge, M. J. French, and G. A. D. Briggs, IEEE Silicon Nanoelectronics Workshop (SNW 2008), p32 (2008), Single shot measurement in silicon single electron transistors

  • K. Hammura, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology ISOM-TOHYO'08, p (2008), Derivation of sensitivity of a Geiger mode APDS detector from a given efficiency to estimate total photon counts

  • M. G. Tanner, G. Podd, and D. A. Williams, 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), p (2008), Controlled polarisation and excitation of silicon on insulator isolated double quantum dots with remote charge sensing

  • M. G. Tanner, G. Podd, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW 2008), p125 (2008), Controlled polarisation and excitation of silicon on insulator isolated double quantum dots with remote charge sensing

  • P. Howard, A. Andreev, and D. A. Williams, 34th International Symposium on Compound Semiconductors, p3156 (2008), Density functional theory calculations of electronic structure in silicon double quantum dots

  • G. Podd, G. Hutchinson, D. Hasko, and D. Williams, Applied Superconductivity Conference 2006, p710 (2007), Hot-phonon controlled MicroSQUIDs with independently controlled junctions

  • L. A. Creswell, D. G. Hasko, and D. A. Williams, 32nd International Conference on Micro- and Nano-Engineering, p1614 (2007), Microwave resonances in silicon-based single electron transistors

  • L. San Emeterio Alvarez, G. Burnell, C. H. Marrows, K. -Y. Wang, A. M. Blackburn, and D. A. Williams, 10th Joint Magnetism and Magnetic Materials Conference/International Magnetics Conference, p09F508 (2007), Nucleation and propagation of domains walls in a Co/Pt multilayer wire

  • B. W. Balmforth, F. S. F. Brossard, S. Schirmer, and D. A. Williams, 4th IEEE International Conference on Group IV Photonics, p152 (2007), Silicon photonic crystal microcavities for optical quantum information processing

  • M. G. Tanner, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation

  • A. M. Blackburn, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1241 (2006), Electron-beam induced deposition of a nanotip within a nano-aperture structure

  • K. H. Lee, A. M. Green, F. S. F. Brossard, R. A. Taylor, D. N. Sharp, A. J. Turberfield, D. A. Williams, and G. A. D. Briggs, 2006 Conference on Lasers & Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS), p (2006), Study of two-photon laser photolithography with SU-8 at cryogenic temperatures

  • M. G. Tanner, D. G. Hasko, and D. A. Williams, 31st International Conference on Micro- and Nano-Engineering, p1818 (2006), Investigation of silicon isolated double quantum-dot energy levels for quantum computation

  • M. G. Tanner, E. G. Emiroglu, D. G. Hasko, and D. A. Williams, 30th International Conference on Micro and Nano Engineering, p195 (2005), Geometry dependence of the energy levels in silicon isolated double quantum-dots

  • A. M. Blackburn, D. G. Hasko, and D. A. Williams, 18th International Vacuum Nanoelectronics Conference (IVCN 2005) , p180 (2005), In-vacuum resonant tunneling in the nanopentode

  • E. G. Emiroglu, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p701 (2004), Single-electron polarization of an isolated double quantum dot in silicon

  • A. M. Blackburn, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p797 (2004), Improved nanotriode fabrication process for multiple gates and reduced leakage current

  • G. D. Hutchinson, H. Qin, D. J. Kang, S. B. Lee, M. G. Blamire, D. G. Hasko, and D. A. Williams, 29th International Conference on Micro and Nano Engineering (MNE 2003), p773 (2004), Fabrication of hot phonon controlled junction microSQUIDs

  • A. M. Blackburn, D. G. Hasko, H. Ahmed, and D. A. Williams, 16th International Vacuum Microelectronics Conference (IVMC2003), p1298 (2004), Tungsten pedestal structure for nanotriode devices

  • X. Xu, D. A. Williams, J. R. A. Cleaver, D. Zhou, and C. Stanley, 2004 13th International Conference on Semiconducting and Insulating Materials, p (2004), InAs quantum dots for quantum information processing

  • G. D. Hutchinson, H. Qin, D. J. Kang, S. B. Lee, D. G. Hasko, M. G. Blamire, and D. A. Williams, International Superconducting Electronics Conference (ISEC 2003), p1544 (2003), Hot phonon controlled-junction superconducting quantum interference device

  • H. Qin, S. Yasin, and D. A. Williams, 47th International Conference on Electron Ion and Photon Beam Technology and Nanofabrication (EIPBN), p2852 (2003), Fabrication and characterization of a SiGe double quantum dot structure

  • A. Ardavan, M. Austwick, S. C. Benjamin, G. A. D. Briggs, T. J. S. Dennis, A. Ferguson, D. G. Hasko, M. Kanai, A. N. Khlobystov, B. W. Lovett, G. W. Morley, R. A. Oliver, D. G. Pettifor, K. Porfyrakis, J. H. Reina, J. H. Rice, J. D. Smith, R. A. Taylor, D. A. Williams, C. Adelmann, H. Mariette, and R. J. Hamers, Discussion Meeting of the Royal-Society , p1473 (2003), Nanoscale solid-state quantum computing

  • L. Seung-Beck, G. D. Hutchinson, D. G. Hasko, D. A. Williams, and H. Ahmed, Applied Superconductivity Conference 2002, p (2003), Digital logic gates using hot-phonon controlled superconducting nanotransistors

  • E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 28th International Conference on Micro- and Nano-Engineering, p755 (2003), Silicon single-electron parametron cell for solid-state quantum information processing

  • L. A. W. Robinson, S. B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, 28th International Conference on Micro- and Nano-Engineering, p615 (2003), Self-aligned electrodes for suspended carbon nanotube structures

  • B. Kaestner, D. A. Williams, and D. G. Hasko, 28th International Conference on Micro- and Nano-Engineering, p797 (2003), Nanoscale lateral light emitting p-n junctions in AlGaAs/GaAs

  • B. Kaestner, J. Wunderlich, D. G. Hasko, and D. A. Williams, Conference on Low Dimensional Structures and Devices (LDSD), p423 (2003), Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs

  • L. A. W. Robinson, S. B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, 3rd International Conference on Trends in Nanotechnology, pPII S0957-4484(03)54422-1 (2003), Fabrication of self-aligned side gates to carbon nanotubes

  • L. Seung-Beck, G. D. Hutchinson, D. A. Williams, D. G. Hasko, and H. Ahmed, Trends in Nanotechnology (TNT 2002) Conference, p (2003), Superconducting nanotransistor based digital logic gates

  • A. M. Blackburn, D. G. Hasko, D. A. Williams, and H. Ahmed, 16th International Vacuum Microelectronics Conference (IVMC2003), p111 (2003), Incoporation of a tungsten pedestal structure into the nanotriode device

  • E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 46th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), p2806 (2002), Single-electron parametron memory cell

  • E. G. Emiroglu, Z. A. K. Durrani, D. G. Hasko, and D. A. Williams, 46th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), p2806 (2002), Single-electron parametron memory cell

  • B. Kaestner, D. G. Hasko, and D. A. Williams, International Conference on Solid State Devices and Materials, p2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs

  • B. Kaestner, D. G. Hasko, and D. A. Williams, International Conference on Solid State Devices and Materials, p2513 (2002), Lateral p-n junction in modulation doped AlGaAs/GaAs

  • H. O. Muller, D. A. Williams, and H. Mizuta, 7th International Workshop on Computational Electronics (IWCE-7), p193 (2001), Design optimization of Coulomb blockade devices

  • H. O. Muller, D. A. Williams, H. Mizuta, and Z. A. K. Durrani, 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), p36 (2000), Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance

  • H. -O. Muller, D. A. Williams, and H. Mizuta, 7th International Workshop on Computational Electronics. Book of Abstract. IWCE, p (2000), Design optimization of Coulomb blockade devices

  • H. O. Muller, D. A. Williams, H. Mizuta, Z. A. K. Durrani, A. C. Irvine, and H. Ahmed, 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11), p85 (1999), Simulation of Si multiple tunnel junctions

  • D. A. Williams, A. M. Marsh, and H. Ahmed, 11th International Conference on the Electronic Properties of Two-Dimensional Systems, p (1996), Transport through superconductor-semiconductor junctions in different scattering limits

  • J. J. Baumberg, and D. A. Williams, Combined Conference of the 4th International Conference on Phonon Physics and the 8th International Conference on Phonon Scattering in, p (1996), Ultrafast dynamics of optic phonons in a 2D electron gas

  • B. W. Alphenaar, and D. A. Williams, Proceedings of 22nd International Conference on the Physics of Semiconductors, p (1995), Magnetic field dependence of the quantum Hall liquid/insulator transition

  • D. A. Williams, A. M. Marsh, T. D. Moore, and W. M. Stobbs, Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995, p561 (1995), Granular superconducting contacts to buried two-dimensional electron gases

  • A. M. Marsh, D. A. Williams, and H. Ahmed, NATO Advanced Research Workshop on Mesoscopic Superconductivity, p307 (1994), Multiple andreev reflection in buried heterostructure - alloy superconductor devices

  • D. A. Williams, E. K. Pettersen, D. J. Paul, and H. Ahmed, Proceedings of Microscopy of Semiconducting Materials: 8th Oxford Conference (SMM VIII), p (1993), High resolution scanning electron microscopy in mesoscopic physics

  • D. A. Williams, H. H. Mueller, W. Chen, J. D. White, J. Allam, K. Nakazato, and J. R. A. Cleaver, Proceedings of the 4th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology, p (1993), Multistability at the tunnelling-ballistic boundary in a mesoscopic device

  • D. A. Williams, R. A. Mcmahon, and H. Ahmed, Symp At The 1989 Spring Meeting Of The European Materials Soc : Science And Technology Of Defects In Silicon, p423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers

  • E. C. G. Kirk, D. A. Williams, and H. Ahmed, Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference, p (1989), Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices

  • D. A. Williams, R. A. Mcmahon, and H. Ahmed, Symp At The 1989 Spring Meeting Of The European Materials Soc : Science And Technology Of Defects In Silicon, p423 (1989), A study of growth defects in seeded and unseeded silicon on insulator layers

  • B. Dunne, S. O'flanagan, L. Hobbs, C. G. Cahill, A. Mathewson, W. A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J. L. Regolini, D. Bensahel, J. L. Mermet, H. Bono, H. Achard, J. P. Joly, K. M. Barfoot, M. Field, G. F. Hopper, D. J. Godfrey, P. J. Timans, D. Smith, D. A. Williams, R. A. Mcmahon, and H. Ahmed, 1st European SOI Workshop, p (1988), Materials and devices toward three-dimensional integration

  • C. G. Cahill, B. Dunne, S. O'flanagan, L. Hobbs, A. Mathewson, W. A. Lane, M. Montier, D. Chapuis, Y. Gris, L. Karapiperis, G. Garry, D. Dieumegard, J. L. Regolini, D. Bensahel, J. L. Mermet, H. Bono, H. Achard, J. P. Joly, K. M. Barfoot, M. Field, G. F. Hopper, D. J. Godfrey, P. J. Timans, D. Smith, D. A. Williams, R. A. Mcmahon, and H. Ahmed, ESPRIT '88. Putting the Technology to Use. Proceedings of the 5th Annual ESPRIT Conference, p (1988), Materials and devices toward three-dimensional integration

  • D. A. Williams, R. A. Mcmahon, and H. Ahmed, Silicon-On-Insulator and Buried Metals in Semiconductors. Symposium, p (1988), Improvements in zone melt recrystallized SOI layers by the use of selective epitaxial growth in the seed windows

  • D. A. Williams, R. A. Mcmahon, H. Ahmed, K. M. Barfoot, D. J. Godfrey, B. Dunne, and A. Mathewson, Silicon-On-Insulator and Buried Metals in Semiconductors. Symposium, p (1988), TEM and SEM studies of multiple silicon on insulator films for three-dimensional circuits

  • D. A. Williams, R. A. Mcmahon, H. Ahmed, and W. M. Stobbs, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, p (1987), Cross sectional TEM and SEM studies of silicon on insulator regrowth mechanisms

  • D. A. Williams, R. A. Mcmahon, D. G. Hasko, H. Ahmed, G. F. Hopper, and D. J. Godfrey, Semiconductor-on-Insulator and Thin Film Transistor Technology Symposium, p (1986), A study of melting and resolidification of silicon-on-insulator structures formed by lateral epitaxy