Dr Aleksey Andreev

Research Interests

My research interests include quantum information processing, semiconductor laser physics, theory of electron and hole recombination processes in semiconductor nanostructures (in particular, non-radiative Auger recombination), theory of the band structure and optical properties of semiconductor quantum dots, elastic strain effects in nanostructures with quantum dots, many-body effects in carbon nanotubes, nitrides-based quantum dots and quantum wells (and devices of their base), mid-infrared (i.e. Sb-based) materials and devices (detectors, sensors, LEDs, lasers, transistors), theory of electron and hole electrical mobility in semiconductor nanostructures, physics and new concepts of solar cells, quantum transport (including spin transport) in nano-devices for magnetic field sensors, magnetic materials and permanent magnets (in particular, containing rare-earth elements), methods for band structure calculations in semiconductors (kp-based methods, tight-binding, density functional theory), modelling of advanced transistor structures, 3D modelling of various nano devices, medical and biological applications (in particular, sensors, diagnostics and DNA sequencing)

Recent Research projects

Last Publications

• N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, and T. Kodera, Appl. Phys. Lett. 117, 094001 (2020), Temperature dependence of hole transport properties through physically defined silicon quantum dots

• Z. Durrani, M. Jones, F. Abualnaja, C. Wang, M. Kaestner, S. Lenk, C. Lenk, I. W. Rangelow, and A. Andreev, J. Appl. Phys. 124, 14, 144502 (2018), Room-temperature single dopant atom quantum dot transistors in silicon formed by field-emission scanning probe lithography

• T. -Y. Yang, A. Andreev, Y. Yamaoka, T. Ferrus, T. Kodera, S. Oda, and D. A. Williams, Tech. Digest Of IEEE International Electron Devices Meeting (IEDM), p850 (2016), Quantum Information Processing in a Silicon-based System