Dr Aleksey Andreev
Telephone : +44.1223.44.29.05 (Direct)
+44.1223.44.29.00 (Secretary)
Email: aa476 (add domain name : "cam.ac.uk")
List of publications
Journal articles :
N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, and T. Kodera, Appl. Phys. Lett. 117, 094001 (2020), Temperature dependence of hole transport properties through physically defined silicon quantum dots
Z. Durrani, M. Jones, F. Abualnaja, C. Wang, M. Kaestner, S. Lenk, C. Lenk, I. W. Rangelow, and A. Andreev, J. Appl. Phys. 124, 14, 144502 (2018), Room-temperature single dopant atom quantum dot transistors in silicon formed by field-emission scanning probe lithography
T. -Y. Yang, A. Andreev, Y. Yamaoka, T. Ferrus, T. Kodera, S. Oda, and D. A. Williams, Tech. Digest Of IEEE International Electron Devices Meeting (IEDM), p850 (2016), Quantum Information Processing in a Silicon-based System
S. Ihara, A. Andreev, D. A. Williams, T. Kodera, and S. Oda, Appl. Phys. Lett. 107, 1, 013102 (2015), Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures
T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, and D. A. Williams, New J. Phys. 16, 1, 013016 (2014), GHz photon-activated hopping between localized states in a silicon quantum dot
E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa, M. Hopkinson, A. D. Andreev, A. M. Sanchez, R. Beanland, M. S. Skolnick, and A. I. Tartakovskii, Nature Nanotechnology 7, 10, 646 (2012), Structural analysis of strained quantum dots using nuclear magnetic resonance
T. Ferrus, A. Rossi, A. Andreev, P. Chapman, and D. A. Williams, Thinkmind Digital Library ICQNM 5, 41 (2011), Quantum Computing with Charge States in Silicon : Towards a Leadless Approach
P. Howard, A. Andreev, and D. A. Williams, Phys. Stat. Sol. C 5, 9, 3156 (2008), Density functional theory calculations of electronic structure in silicon double quantum dots
X. Xu, A. Andreev, D. A. Williams, and J. R. A. Cleaver, Appl. Phys. Lett. 89, 9, (2006), Electroluminescence from coupled InGaAs/GaAs quantum dots embedded in lateral p-i-n junctions
Conference proceedings :
T. Y. Yang, S. Das, T. Ferrus, A. Andreev, and D. A. Williams, IEEE Silicon Nanoelectronics Workshop (SNW), p (2014), Charge Sensing of Two Isolated Double Quantum Dots
X. Xu, A. Andreev, F. Brossard, K. Hammura, and D. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p246 (2009), InAs based quantum dots for Quantum Information Processing: From Fundamental Physics to ' Plug and Play' Devices
P. Howard, A. D. Andreev, and D. A. Williams, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p243 (2009), Modelling of charge qubits based on si/sio(2) double quantum dots
D. A. Williams, M. G. Tanner, T. Ferrus, G. Podd, A. Andreev, and P. Chapman, 9th International Symposium on Foundations of Quantum Mechanics in the Light of New Technology (ISQM-Tokyo 08), p235 (2009), Silicon isolated double quantum-dot qubit architectures
P. Howard, A. Andreev, and D. A. Williams, 34th International Symposium on Compound Semiconductors, p3156 (2008), Density functional theory calculations of electronic structure in silicon double quantum dots