Dr Thierry Ferrus
Telephone : +44.1223.44.29.35 (Direct)
+44.1223.44.29.00 (Secretary)
Email: taf25 (add domain name : "cam.ac.uk")
Spin qubits using donors
Donors or more generally impurities in silicon can be used as spin qubits and can be represented as the ultimate scaling in the Moore's law [1]. Single atoms can now be implanted using dedicated techniques [2] or be deposited by an AFM tip on a H2 passivated silicon surface after local desorption [3].
References :
- Gordon E. Moore, Electronics, 38 (1965) Cramming More Components Onto Integrated Circuits
- D. N. Jamieson, C. Yang, T. Hopf, S. M. Hearne, C. I. Pakes, S. Prawer, M. Mitic, E. Gauja, S. E. Andresen, F. E. Hudson, A. S. Dzurak and R. G. Clark, Appl. Phys. Lett. 86, 202101 (2005) Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions
- S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rue$\beta$, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003) Atomically Precise Placement of Single Dopants in Si