Dr Thierry Ferrus

Research Interests

• Nanoscale semiconductor devices
• Quantum computing
• Transport properties of doped materials
• Single dopant electronics

I have been studying electronic properties of semiconductor devices using transport measurement since 1996 when I started my PhD at the Institut National des Sciences Appliquées in Toulouse (France) to work on III-V quantum wire superlattices. I then joined the Semiconductor Physics Group at the Cavendish Laboratory in 2001 with the aim of implementing quantum computation in silicon Metal-Oxide-Semiconductors Field Effect Transistors. I then moved to the Microelectronics Group to study the properties of Silicon Single Electron Transistors using high bandwidth techniques and microwave irradiation. In 2006, I finally joined the Hitachi Cambridge Laboratory to work on Quantum computation scheme using charge qubit states in a silicon double dot system.

Recent Research projects

My research is mostly dedicated to quantum information and the experimental implementation of quantum operations in nanoscale structures. These includes spin qubits in donors and MOS structures as well as spin states in topological insulators.

Last Publications

• A. Lasek, C. H. W. Barnes, and T. Ferrus, ArXiv, 2111.10907 (2021), Engineering single donor detectors in doped silicon

• Y. S. Yordanov, J. Chevalier-Drori, T. Ferrus, M. Applegate, and C. H. W. Barnes, Phys. Rev. A 104, 052619 (2021), Invariant subspaces of two-qubit quantum gates and their application in the verification of quantum computers

• S. Bugu, S. Nishiyama, K. Kato, Y. Liu, S. Murakami, T. Mori, T. Ferrus, and T. Kodera, Sci. Rep. 11, 20039 (2021), 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined p-channel Silicon Quantum Dot