Dr Byong-Guk Park
Telephone : +44.1223.44.29.14 (Direct)
+44.1223.44.29.00 (Secretary)
Email: bp286 (add domain name : "cam.ac.uk")
List of publications
Journal articles :
X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, and T. Jungwirth, Phys. Rev. Lett. 108, 1, 017201 (2012), Electrical Measurement of Antiferromagnetic Moments in Exchange-Coupled IrMn/NiFe Stacks
B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, and T. Jungwirth, Nature Materials 10, 5, 347 (2011), A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.
J. Wunderlich, B. Park, A. Irvine, L. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 6012, 1801 (2010), Spin Hall Effect Transistor
C. Ciccarelli, B. G. Park, S. Ogawa, A. J. Ferguson, and J. Wunderlich, Appl. Phys. Lett. 97, 8, 082106 (2010), Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
J. Wunderlich, A. C. Irvine, J. Sinova, B. G. Park, L. P. Zarbo, X. L. Xu, B. Kaestner, V. Novak, and T. Jungwirth, Nat. Phys. 5, 9, 675 (2009), Spin-injection Hall effect in a planar photovoltaic cell
K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 95, 23, 232516 (2009), MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
J. H. Park, S. Ikeda, H. Yamamoto, H. D. Gan, K. Mizunuma, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, and H. Ohno, IEEE Trans. Mag. 45, 10, 3476 (2009), Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier
B. G. Park, J. Wunderlich, D. A. Williams, S. J. Joo, K. Y. Jung, K. H. Shin, K. Olejnik, A. B. Shick, and T. Jungwirth, Phys. Rev. Lett. 100, 8, 087204 (2008), Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlO(x)/Pt structures
B. G. Park, T. Banerjee, J. C. Lodder, and R. Jansen, Phys. Rev. Lett. 99, 21, 217206 (2007), Tunnel spin polarization versus energy for clean and doped Al2O3 barriers
R. Jansen, T. Banerjee, B. G. Park, and J. C. Lodder, Appl. Phys. Lett. 90, 19, 192503 (2007), Probing momentum distributions in magnetic tunnel junctions via hot-electron decay
B. G. Park, T. Banerjee, J. C. Lodder, and R. Jansen, Phys. Rev. Lett. 97, 13, 137205 (2006), Opposite spin asymmetry of elastic and inelastic scattering of nonequilibrium holes injected into a ferromagnet
B. G. Park, T. Banerjee, B. C. Min, J. C. Lodder, and R. Jansen, Phys. Rev. B 73, 17, 172402 (2006), Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor
B. G. Park, E. Haq, T. Banerjee, B. C. Min, J. C. Lodder, and R. Jansen, J. Appl. Phys. 99, 8, 08S703 (2006), Excitation and transport of hot holes in a magnetic tunnel transistor
B. G. Park, T. Banerjee, B. C. Min, J. G. M. Sanderink, J. C. Lodder, and R. Jansen, J. Appl. Phys. 98, 10, 103701 (2005), Temperature dependence of magnetocurrent in a magnetic tunnel transistor
W. C. Lim, B. G. Park, J. Y. Bae, and T. D. Lee, Physica Status Solidi A-applied Research 201, 8, 1696 (2004), Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions
B. G. Park, T. D. Lee, T. H. Lee, C. G. Kim, and C. O. Kim, J. Appl. Phys. 93, 10, 6423 (2003), Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers
J. H. Lee, S. J. Kim, C. S. Yoon, C. K. Kim, B. G. Park, and T. D. Lee, J. Appl. Phys. 92, 10, 6241 (2002), Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness
B. G. Park, and T. D. Lee, Appl. Phys. Lett. 81, 12, 2214 (2002), Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier
B. G. Park, and T. D. Lee, IEEE Trans. Mag. 38, 5, 2706 (2002), Enhanced tunnel magnetoresistance by Hf-layer insertion in the AlOx tunnel barriers
B. G. Park, J. Y. Bae, and T. D. Lee, J. Appl. Phys. 91, 10, 8789 (2002), Growth characteristics of Al oxide formed by ozone in magnetic tunnel junctions
J. H. Lee, H. D. Jeong, C. S. Yoon, C. K. Kim, B. G. Park, and T. D. Lee, J. Appl. Phys. 91, 3, 1431 (2002), Interdiffusion in antiferromagnetic/ferromagnetic exchange coupled NiFe/IrMn/CoFe multilayer
J. H. Lee, H. D. Jeong, H. Kyung, C. S. Yoon, C. K. Kim, B. G. Park, and T. D. Lee, J. Appl. Phys. 91, 1, 217 (2002), Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment
B. G. Park, and T. D. Lee, IEEE Trans. Mag. 35, 5, 2919 (1999), Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions
Conference proceedings :
J. H. Park, S. Ikeda, H. Yamamoto, H. D. Gan, K. Mizunuma, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, and H. Ohno, International Magnetics Conference 2009 (INTERMAG), p3476 (2009), Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier
B. G. Park, T. Banerjee, B. C. Min, J. G. M. Sanderink, J. C. Lodder, and R. Jansen, INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference, p (2005), Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor
W. C. Lim, B. G. Park, J. Y. Bae, and T. D. Lee, International Symposium on Magnetic Materials and Applications, p1696 (2004), Effects of free layer materials and thickness on TMR behaviour in magnetic tunnel junctions
B. G. Park, T. D. Lee, T. H. Lee, C. G. Kim, and C. O. Kim, 47th Annual Conference on Magnetism and Magnetic Materials, p6423 (2003), Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers
B. G. Park, and T. D. Lee, International Magnetics Conference (Intermag Europe 2002), p2706 (2002), Enhanced tunnel magnetoresistance by Hf-layer insertion in the AlOx tunnel barriers
B. G. Park, J. Y. Bae, and T. D. Lee, 46th Annual Conference on Magnetism and Magnetic Materials, p8789 (2002), Growth characteristics of Al oxide formed by ozone in magnetic tunnel junctions
B. G. Park, and T. D. Lee, Intermag Europe 2002 Digest of Technical Papers. 2002 IEEE International Magnetics Conference, p (2002), Enhanced tunnel magnetoresistance by Hf layer insertion in the tunnel barriers
B. Park, and T. D. Lee, International Conference on Magnetism, p926 (2001), A study on tunneling magnetoresistance in magnetic tunnel junctions oxidized by ozone
B. G. Park, and T. D. Lee, 1999 International Magnetics Conference (INTERMAG 99), p2919 (1999), Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions
