Dr Byong-Guk Park

Telephone : +44.1223.44.29.14 (Direct)

+44.1223.44.29.00 (Secretary)

Email: bp286 (add domain name : "cam.ac.uk")

Research Interests

Spin-injection Hall Effect in 2-dimentional electron gas and electrical measurement of spin transport in semiconductor channel
Coulomb Blockade Anisotropic Magnetoresistance (CBAMR) and Tunnelling Anisotropic Magnetoresistance (TAMR) in metallic system as well as magnetoresistance of a tunnel junction and a single electron transistor utilizing spin-orbit coupling

X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, and T. Jungwirth, Phys. Rev. Lett. 108, 1, 017201 (2012), Electrical Measurement of Antiferromagnetic Moments in Exchange-Coupled IrMn/NiFe Stacks
B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, and T. Jungwirth, Nature Materials 10, 5, 347 (2011), A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.
J. Wunderlich, B. Park, A. Irvine, L. Zarbo, E. Rozkotova, P. Nemec, V. Novak, J. Sinova, and T. Jungwirth, Science 330, 6012, 1801 (2010), Spin Hall Effect Transistor