Dr Hiromasa Takahashi
Telephone : +44.1223.44.29.03 (Direct)
Email: ht297 (add domain name : "cam.ac.uk")
Hiromasa Takahashi received the B.S., M.S. and Ph. D. degrees from the University of Keio in Tokyo, in 1989, 1991 and 1999, respectively. From 1991 to 1999, he was a Research Scientist at the Hitachi Research Laboratory in Japan, where he has been engaged in the magnetization study of novel high magnetic moment Fe16N2 thin films using Molecular Beam Epitaxy (MBE). In 2000, he was moved to the Hitachi Central Research Laboratory in Tokyo and engaged in the research of future hard disk drive (HDD) reading sensor technologies (CPPGMR, TMR) and new materials (Half-metallic materials). In 2004, he was also a Visiting Scientist at Research Institute of Electrical Communication at Tohoku University in Japan to start the research of spintronics devices (Spin accumulation, MgO-TMR). In 2006, he moved to Research Manager/Scientist at Advanced Research Laboratory and engaged in the spintronics devices for future HDD and magnetic memories (SPRAM) using spin transfer torquemagnetization switching phenomena. In 2010, he was moved to the Hitachi Cambridge Laboratory as a Research Manager/Scientist.
Recent Research projects
B. Rana, Y. Fukuma, K. Miura, H. Takahashi, and Y. Otani, Appl. Phys. Lett. 111, 5, 052404 (2017), Excitation of coherent propagating spin waves in ultrathin CoFeB film by voltage-controlled magnetic anisotropy
B. Rana, Y. Fukuma, K. Miura, H. Takahashi, and Y. Otani, Sci. Rep. 7, 2318 (2017), Effect of excitation power on voltage induced local magnetization dynamics in an ultrathin CoFeB film
K. Miura, S. Yabuuchi, M. Yamada, M. Ichimura, B. Rana, S. Ogawa, H. Takahashi, Y. Fukuma, and Y. Otani, Sci. Rep. 7, 42511 (2017), Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions