Dr Renichi Yamada

Telephone : +44.1223.44.29.00 (Direct)

+44.1223.44.29.00 (Secretary)

Email: ry267 (add domain name : "cam.ac.uk")

Research Interests

Major research interests include reliability physics of very large-scale integration, SiC power semiconductor devices, Quantum computing, and spintronics.

Quantum Information Processing, Spintronics, and Quantum Optics

H. Matsushima, R. Yamada, and A. Shima, IEEE Trans. Electr. Dev. 65, 8, 3318 (2018), Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress
H. Okino, N. Kameshiro, K. Konishi, A. Shima, and R. Yamada, J. Appl. Phys. 122, 23, 235704 (2017), Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes
T. Ishigaki, S. Hayakawa, T. Murata, T. Nozoe, H. Onose, H. Miki, M. Sagawa, T. Oda, K. Yasui, D. Kawase, Y. Takayanagi, R. Yamada, T. Masuda, N. Tega, K. Konishi, R. Fujita, H. Matsushima, A. Shima, and K. Saito, Institute Of Electrical And Electronics Engineers Inc, 7990666 (2017), 3.3 kV/450 A full-SiC nHPD2 (next high power density dual) with smooth switching
T. Ishigaki, S. Hayakawa, T. Murata, T. Nozoe, H. Onose, H. Miki, M. Sagawa, T. Oda, K. Yasui, D. Kawase, Y. Takayanagi, R. Yamada, T. Masuda, N. Tega, K. Konishi, R. Fujita, H. Matsushima, A. Shima, and K. Saito, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, p7990666 (2017), 3.3 kV/450 A full-SiC nHPD2 (next high power density dual) with smooth switching